Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition
본문
- Journal
- Applied Surface Science
- Vol
- 664
- Page
- 160242
- Year
- 2024
- File
- Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition.pdf (2.4M) 7회 다운로드 DATE : 2025-10-29 23:03:01