Quantitative Dynamic Evolution of Unoccupied States in Hydrogen Diffused InGaZnSnO TFT under Positive Bias Temperature Stress
본문
- Journal
- ACS Applied Electronic Materials
- Vol
- 2024 6 (10)
- Page
- 7584-7590
- Year
- 2024
- File
- hong-et-al-2024-quantitative-dynamic-evolution-of-unoccupied-states-in-hydrogen-diffused-ingaznsno-tft-under-positive.pdf (3.8M) 9회 다운로드 DATE : 2025-10-29 23:05:56