High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer
본문
- Journal
- Nanomaterials
- Vol
- 15(6)
- Page
- 418
- Year
- 2025
- File
- High-Mobility_Tellurium_Thin-Film_Transistor_Oxyge.pdf (2.7M) 2회 다운로드 DATE : 2025-12-19 13:04:42