Publication

Journal

Optimized hydrogen-supplying gate insulator for high-mobility indium oxide TFTs via atomic-level oxygen reactant engineering

본문

Author: Hwa Young Kim; Seong-In Cho, Dong Yeob Shin, Kwun-Bum Chung, Sang-Hee Ko Park, Jong Beom Ko

Journal: Journal of Alloys and Compounds

Vol: 1020

Page: 179353

Year: 2025

File: 1-s2.0-S0925838825009119-main.pdf (2.5M) 3회 다운로드 DATE : 2025-12-19 13:05:11

목록

이전글Evolution of defect states within bandgap of Indium-Tin-Zinc oxide thin film transistors using quantitative defect analysis method 25.12.19
다음글High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer 25.12.19