Characterization of a pentacene thin film transistor with a HfO2/Al2O3 gate insulator
본문
- Journal
- Journal of the Korean Physical Society
- Vol
- 45(4)
- Page
- p935-938
- Year
- 2010~
- File
- @Characterization of a pentacene thin film transistor with a HfO2_Al2O3 gate insulator.pdf (393.9K) 1회 다운로드 DATE : 2025-12-29 19:48:35
- 이전글Understanding composition–defect–performance relationships in InGaZnO TFTs via photo-induced current transient spectroscopy 26.05.11
- 다음글Composition, structure,and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods 05.11.14