Analysis of defect states in InSnZnO transparent thin film transistors as a function of post annealing
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작성일 2024-07-10 10:41 조회 72회 댓글 0건
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Analysis of defect states in InSnZnO transparent thin film transistors as a function of post annealing
신동엽
NANOSMAT
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- 이전글The correlation between electrical properties and quantitative defect analysis as a function of electrode junction type of amorphous indium tin zinc oxide thin film transistor 24.10.28
- 다음글Analysis of defect in indium gallium zinc oxide thin film transistor as a function of ALD indium deposition cycle 24.06.04
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