Quantitative analysis of defect states in a-InSnZnO via differential reflectance transient spectroscopy
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작성일 2024-11-13 10:45 조회 76회 댓글 0건
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Quantitative analysis of defect states in a-InSnZnO via differential reflectance transient spectroscopy
고진영
MNC
일본 교토
- 이전글Amorphous indium-tin-zinc oxide thin film transistor correlation between electrical properties and defect analysis as a function of conductive homojunction layer insertion electrode 24.11.13
- 다음글The correlation between electrical properties and quantitative defect analysis as a function of electrode junction type of amorphous indium tin zinc oxide thin film transistor 24.10.28
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