Synaptic Characteristics of Bottom-Gated Phototransistors with IndiumGallium-Zinc-Oxide Active Layers as a function of oxygen partial pressure
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작성일 2025-05-28 14:21 조회 54회 댓글 0건
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Synaptic Characteristics of Bottom-Gated Phototransistors with IndiumGallium-Zinc-Oxide Active Layers as a function of oxygen partial pressure
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EMRS Materials Research Society (EMRS)
프랑스 스트라스부르
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