Modulation of Device Properties in InGaZnO Thin Film Transistor using Short Pulse Optical Annealing
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작성일 2025-05-28 14:24 조회 57회 댓글 0건
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Modulation of Device Properties in InGaZnO Thin Film Transistor using Short Pulse Optical Annealing
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EMRS Materials Research Society (EMRS)
프랑스 스트라스부르
- 이전글Quantitative Analysis of Defect States in In-based Amorphous Oxide Semiconductors via Differential Reflectance Transient Spectroscopy 25.05.28
- 다음글Synaptic Characteristics of Bottom-Gated Phototransistors with IndiumGallium-Zinc-Oxide Active Layers as a function of oxygen partial pressure 25.05.28
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