[SCI 논문 게재] Journal of Electroceramics

2016.07.22 13:48

APEL 조회 수:117

 

  • Title : The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure
  • Author : Byung Du Ahn, Kwun-Bum Chung, and Jin-Seong Park
  • Journal : Journal of Electroceramics 34(4), 229 (2015).

 

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